The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Apr. 12, 2018
Applicant:
Silicon Storage Technology, Inc., San Jose, CA (US);
Inventors:
Hieu Van Tran, San Jose, CA (US);
Anh Ly, San Jose, CA (US);
Thuan Vu, San Jose, CA (US);
Hung Quoc Nguyen, Fremont, CA (US);
Assignee:
SILICON STORAGE TECHNOLOGY, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/14 (2006.01); G11C 16/08 (2006.01); G11C 7/06 (2006.01); G11C 8/08 (2006.01); G11C 16/10 (2006.01); G11C 16/28 (2006.01); H01L 27/112 (2006.01); H01L 27/11582 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 7/065 (2013.01); G11C 8/08 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/28 (2013.01); H01L 27/112 (2013.01); H01L 27/11582 (2013.01); H01L 28/00 (2013.01); G11C 2216/04 (2013.01);
Abstract
The present invention relates to a flash memory system comprising one or more sense amplifiers for reading data stored in flash memory cells. The sense amplifiers utilize fully depleted silicon-on-insulator transistors to minimize leakage. The fully depleted silicon-on-insulator transistors comprise one or more fully depleted silicon-on-insulator NMOS transistors and/or one or more fully depleted silicon-on-insulator PMOS transistors.