The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Sep. 13, 2012
Applicants:

Chen Ou, Hsinchu, TW;

Liang Sheng Chi, Hsinchu, TW;

Chun Wei Chang, Hsinchu, TW;

Chih-wei Wu, Hsinchu, TW;

Inventors:

Chen Ou, Hsinchu, TW;

Liang Sheng Chi, Hsinchu, TW;

Chun Wei Chang, Hsinchu, TW;

Chih-Wei Wu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/42 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/08 (2013.01); H01L 33/14 (2013.01); H01L 33/38 (2013.01);
Abstract

A light-emitting device is disclosed and comprises: a substrate; a light-emitting stack comprising a first conductivity type semiconductor layer, an active layer over the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer over the active layer; a transparent conductive layer over the a light-emitting stack; a first trench dividing the transparent conductive layer into a first block and a second block; a connecting layer electrically connecting the two blocks of the transparent conductive layer; a first conductivity type contact layer between the substrate and the first conductivity type semiconductor layer, wherein the conductivity of the first conductivity type contact layer is greater than the conductivity of the first conductivity type semiconductor layer.


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