The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
May. 17, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Tsen Lu, Tainan, TW;
Chien-Ming Lai, Tainan, TW;
Lu-Sheng Chou, Kaohsiung, TW;
Ya-Huei Tsai, Tainan, TW;
Ching-Hsiang Chiu, Yilan County, TW;
Yu-Tung Hsiao, Tainan, TW;
Chen-Ming Huang, Taipei, TW;
Kun-Ju Li, Tainan, TW;
Yu-Ping Wang, Taoyuan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate and a gate structure on the substrate, in which the gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, the middle portion being a nitrogen rich portion, the top portion and the bottom portion being titanium rich portions, and the top portion, the middle portion, and the bottom portion are of same material composition.