The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Oct. 31, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 27/11524 (2017.01); H01L 27/11534 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 27/11524 (2013.01); H01L 27/11534 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
A memory device includes a semiconductor substrate having a cell region and a peripheral region surrounding the cell region and a pair of control gate stacks on the cell region. Each of the control gate stacks includes a storage layer and a control gate on the storage layer. The memory device includes at least one high-κ metal gate stack disposed on the substrate. The high-κ metal gate stack has a metal gate and a high-κ dielectric film wrapping around the metal gate, and a top surface of the control gate is lower than a top surface of the metal gate.