The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Aug. 03, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Yin Hsiao, Chiayi County, TW;
Ching-Chung Yang, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Nien-Chung Li, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A metal-oxide semiconductor transistor includes a substrate, a gate insulating layer disposed on a surface of the substrate, and a metal gate disposed on the gate insulating layer, wherein at least one of the length or the width of the metal gate is greater than or equal to approximately 320 nanometers, and the metal gate has at least one plug hole. The metal-oxide semiconductor transistor further includes at least one insulating plug disposed in the plug hole and two diffusion regions disposed respectively at two sides of the metal gate in the substrate.