The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Oct. 30, 2015
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventor:

Yoichiro Tanaka, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2418 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/1683 (2013.01); H01L 45/08 (2013.01); H01L 45/1226 (2013.01); H01L 45/146 (2013.01);
Abstract

Methods for improving the operation of a memory array by arranging a Metal-Insulator-Metal (MIM) structure between a word line and an adjustable resistance bit line structure are described. The MIM structure may correspond with a metal/ReRAM material/metal structure that is arranged between the word line and an intrinsic polysilicon region of the adjustable resistance bit line structure. In one example, a word line (e.g., TiN) may be arranged adjacent to a ReRAM material (e.g., HfOx) that is adjacent to a first metal (e.g., TiN) that is adjacent to the intrinsic polysilicon region. The first metal may comprise a metal, metal-nitride, or a metal-silicide. In another example, the word line may be arranged adjacent to a ReRAM material that is adjacent to a first metal (e.g., TiN) that is adjacent to a second metal different from the first metal (e.g., tungsten) that is adjacent to the intrinsic polysilicon region.


Find Patent Forward Citations

Tanaka, Yoichiro. (2019). Reram mim structure formation (U.S. Patent No. 10290680). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10290680

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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