The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Oct. 22, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Zhibiao Zhou, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A 6T SRAM cell includes a substrate having thereon a first pull-up (PU-) transistor, a first pull-down (PD-) transistor, a second pull-up (PU-) transistor, and a second pull-down (PD-) transistor. A first contact hard mask partially overlaps with a source diffusion region of the PU-transistor. A second contact hard mask partially overlaps with a first gate and a source diffusion region of the PD-transistor. A first contact plug partially lands on the first contact hard mask and partially lands on the source diffusion region of the PU-transistor. A second contact plug partially lands on the second contact hard mask and partially lands on the source diffusion region of the PD-transistor.