The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jan. 18, 2017
Globalfoundries Inc., Grand Cayman, KY;
Geng Wang, Stormville, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Chengwen Pei, Danbury, CT (US);
Juntao Li, Cohoes, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Various embodiments include three-dimensional (3D) integrated circuit (IC) structures and methods of forming such structures. In some cases, a 3D IC structure includes: a substrate; a first set of transistors overlying the substrate; a first inter-level dielectric (ILD) overlying the first set of transistors and the substrate; a dielectric overlying the first ILD; a semiconductor layer overlying the dielectric; a second set of transistors overlying the semiconductor layer; a capacitor embedded within the dielectric; and a first contact extending through the semiconductor layer and the dielectric to contact one layer of the capacitor, and a second contact extending through the semiconductor layer and the dielectric to contact a second, distinct layer of the capacitor.