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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10290496 B1

PDFFull Text
Date of Patent:
May. 14, 2019

Filed:

Jul. 26, 2017

Substrate processing apparatus and substrate processing method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Jun Ogawa, Yamanashi, JP;

Kazuo Yabe, Yamanashi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorneys:

Nath, Goldberg & Meyer

Jerald L. Meyer

Primary Examiner:

David E Graybill

Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/40 (2006.01); H01J 37/20 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/509 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02315 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/452 (2013.01); C23C 16/4583 (2013.01); C23C 16/4586 (2013.01); C23C 16/45542 (2013.01); C23C 16/45546 (2013.01); C23C 16/45578 (2013.01); C23C 16/509 (2013.01); H01J 37/20 (2013.01); H01J 37/32009 (2013.01); H01J 37/32532 (2013.01); H01L 21/31116 (2013.01); H01J 2237/038 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01);
Abstract

A substrate processing apparatus includes: a protrusion portion formed by a side peripheral wall of a processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating a substrate holder and performing a process; a gas discharge portion provided in the vertically elongated space, and configured to discharge a process gas into the processing space; an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; and a shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space.

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