The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jun. 30, 2017
Western Digital Technologies, Inc., San Jose, CA (US);
Roi Kirshenbaum, Hod-Hasharon, IL;
Karin Inbar, Ramat Hasharon, IL;
Idan Goldenberg, Ramat Hasharon, IL;
Nian Niles Yang, Mountain View, CA (US);
Rami Rom, Zichron-Yaacov, IL;
Alexander Bazarsky, Tel Aviv, IL;
Ariel Navon, Revava, IL;
Philip David Reusswig, Mountain View, CA (US);
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
Systems and methods are described for generating location-based read voltage offsets in a data storage device. Optimal read voltage thresholds vary across memory elements of a device. However, data storage devices are often limited in the number of read voltage thresholds that can be maintained in the device. Thus, it may not be possible to maintain optimal read voltage parameters for each memory element within a device. The systems and methods described herein provide for increased accuracy of read voltage thresholds when applied to memory elements within a specific location in a device, by enabling the use of location-based read voltage offsets, depending on a relative location of the memory element being read from. The read voltage offsets can be determined based on application of a neural network to data regarding optimal read voltage thresholds determined from at least a sample of memory elements in a device.