The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
Jun. 28, 2016
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Han Liu, San Jose, CA (US);
Shantanu R. Rajwade, Sunnyvale, CA (US);
Pranav Kalavade, San Jose, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/24 (2006.01); G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 7/06 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0613 (2013.01); G06F 3/064 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 7/06 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/32 (2013.01);
Abstract
In one embodiment, an apparatus comprises a storage device comprising a NAND flash memory. The storage device is to receive a read request from a computing host; identify a plurality of pages specified by the read request that are stored in the same group of memory cells of the NAND flash memory, wherein each memory cell of the group of memory cells is to store a bit of each of the plurality of identified pages; and read, in a single read cycle, the plurality of pages from the group of memory cells of the NAND flash memory.