The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Dec. 05, 2014
Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Yasushi Sakaida, Toyama, JP;

Ryuta Mizuochi, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); C09D 133/06 (2006.01); C09D 133/14 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C09D 133/06 (2013.01); C09D 133/066 (2013.01); C09D 133/14 (2013.01); G03F 7/2059 (2013.01); H01L 21/0273 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01);
Abstract

An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.


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