The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Sep. 27, 2017
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventors:

Kazuo Watanabe, Kyoto, JP;

Satoshi Tanaka, Kyoto, JP;

Kazuhito Nakai, Kyoto, JP;

Takayuki Tsutsui, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 1/32 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H04B 1/04 (2006.01); H03F 1/02 (2006.01); H03F 1/30 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/3205 (2013.01); H03F 1/02 (2013.01); H03F 1/0261 (2013.01); H03F 1/302 (2013.01); H03F 1/32 (2013.01); H03F 3/19 (2013.01); H03F 3/211 (2013.01); H03F 3/24 (2013.01); H03F 3/245 (2013.01); H04B 1/0475 (2013.01); H03F 2200/18 (2013.01); H03F 2200/21 (2013.01); H03F 2200/451 (2013.01); H03F 2201/3215 (2013.01); H03F 2203/21106 (2013.01); H04B 2001/045 (2013.01);
Abstract

A power amplification module includes: a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal; a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal; and first and second bias circuits that supply first and second bias currents to bases of the first and second transistors. The first bias circuit includes a third transistor that outputs the first bias current from its emitter or source, a capacitor that is input with the first radio frequency signal and connected to the base of the first transistor, a first resistor connected between the emitter or source of the third transistor and the base of the first transistor, a second resistor connected between the capacitor and the emitter or source of the third transistor, and a third resistor connected between the capacitor and the base of the first transistor.


Find Patent Forward Citations

Loading…