The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Dec. 01, 2016
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Yu-Ting Wu, Schaumburg, IL (US);

Nick Yang, Wilmette, IL (US);

Joseph Gerard Schultz, Wheaton, IL (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01); H03F 1/02 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H03F 3/189 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0288 (2013.01); H01L 23/538 (2013.01); H01L 23/66 (2013.01); H01L 24/06 (2013.01); H01L 24/46 (2013.01); H01L 24/49 (2013.01); H03F 3/189 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/24 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6644 (2013.01); H01L 2223/6683 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/4917 (2013.01); H01L 2224/49176 (2013.01); H03F 2200/114 (2013.01); H03F 2200/222 (2013.01); H03F 2200/318 (2013.01); H03F 2200/387 (2013.01); H03F 2200/432 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21103 (2013.01); H03F 2203/21106 (2013.01);
Abstract

An embodiment of a Doherty amplifier module includes a substrate, a first amplifier die, and a second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. The first and second amplifier die each also include an elongated output pad that is configured to enable a pluralities of wirebonds to be connected in parallel along the length of the elongated output pad so that the pluralities of wirebonds extend in perpendicular directions to the first and second signal paths.


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