The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Feb. 20, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Jumpei Tajima, Mitaka, JP;
Toshiki Hikosaka, Kawasaki, JP;
Kenjiro Uesugi, Kawasaki, JP;
Shigeya Kimura, Yokohama, JP;
Masahiko Kuraguchi, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first layer, a second layer, a third layer, and an insulating layer. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes at least one of AlGaN (0<x1<1) or p-type AlGaN (0≤z1<1) and has a first surface, a second surface, and a third surface. The second layer includes AlGaN (0≤x2<1 and x2<x1) and includes a first partial region, a second partial region, and a third partial region. The third layer includes AlGaN (0<x3<1 and x2<x3) and includes a fourth partial region, a fifth partial region, and a sixth partial region.