The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Nov. 01, 2017
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Niskayuna, NY (US);
Dong-Ick Lee, Loudonville, NY (US);
Min Gyu Sung, Latham, NY (US);
Chanro Park, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Device structures and fabrication methods for a field-effect transistor. A first dielectric spacer adjacent to a sidewall of a gate placeholder structure. A contact placeholder structure is formed adjacent to the first dielectric spacer such that the first dielectric spacer is arranged laterally between the gate placeholder structure and the contact placeholder structure. The contact placeholder structure and the first dielectric spacer are recessed to open a space over the contact placeholder structure and the first dielectric spacer. A second dielectric spacer is formed in the space adjacent to the sidewall of the gate placeholder structure and over the first dielectric spacer.