The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Feb. 01, 2018
United Microelectronics Corp., Hsinchu, TW;
Ming-Chang Lu, Changhua County, TW;
Wei Chen, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
Provided is a semiconductor structure including a substrate, a first semiconductor layer, a second semiconductor layer, a gate electrode, a source electrode and a drain electrode. The first semiconductor layer contains a group III-V-VI semiconductor compound layer and is disposed on the substrate. The second semiconductor layer includes a group III-V semiconductor compound and is disposed on the first semiconductor layer. The gate electrode is disposed on the second semiconductor layer. The source electrode and the drain electrode are disposed on the second semiconductor layer beside the gate electrode.