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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10283593 B1

PDFFull Text
Date of Patent:
May. 07, 2019

Filed:

Feb. 12, 2016

Thin film transistor and method for manufacturing the same

Applicant:

Jusung Engineering Co., Ltd., Gwangju-si, KR;

Inventors:

Jin Wook Moon, Gwangju-si, KR;

Yun Hoe Kim, Seoul, KR;

Jae Ho Kim, Seoul, KR;

Kyu Bum Lee, Gwangju-si, KR;

Jae Wan Lee, Gwangju-si, KR;

Assignee:

Jusung Engineering Co., Ltd., Gwangju-si, KR;

Attorneys:

Andrew D. Fortney

Central California IP Group, P.C.

Primary Examiner:

Hoang-Quan T Ho

Assistant Examiner:

Juanita B Rhodes

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/22 (2006.01); H01L 29/26 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 21/0262 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/205 (2013.01); H01L 29/22 (2013.01); H01L 29/26 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01);
Abstract

Disclosed is a thin film transistor including a gate electrode on a substrate, a gate insulator over the entire surface of the substrate including the gate electrode, a first active layer corresponding to the gate electrode on the gate insulator, a second active layer on or under the first active layer, and a source electrode and a drain electrode spaced apart by a predetermined distance, the source electrode and the drain electrode being connected to the first active layer or the second active layer.

Find Patent Forward Citations

Moon, Jin. (2019). Thin film transistor and method for manufacturing the same (U.S. Patent No. 10283593). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10283593

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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