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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10283591 B1

PDFFull Text
Date of Patent:
May. 07, 2019

Filed:

Dec. 18, 2017

Silicon carbide semiconductor device and method of manufacturing the silicon carbide semiconductor device

Applicants:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Naoyuki Ohse, Matsumoto, JP;

Yusuke Kobayashi, Tsukuba, JP;

Takahito Kojima, Matsumoto, JP;

Shinsuke Harada, Tsukuba, JP;

Assignees:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Joseph M Galvin, Iii

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1041 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/7813 (2013.01);
Abstract

A vertical MOSFET of a trench gate structure includes an n-type drift layer and a p-type base layer formed by epitaxial growth. The vertical MOSFET includes a trench that penetrates the n-type drift layer and the p-type base layer. A low-concentration thin film is provided in the trench. The low-concentration thin film is in contact with the p-type base layer and is of the same conductivity type as the p-type base layer. Further, the low-concentration thin film has an impurity concentration that is lower than that of the p-type base layer.

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Ohse, Naoyuki. (2019). Silicon carbide semiconductor device and method of manufacturing the silicon carbide semiconductor device (U.S. Patent No. 10283591). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10283591

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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