The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Dec. 13, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Hsuan Yang, Taichung, TW;
Wen Han Hung, Hsinchu, TW;
Tzy-Kuang Lee, Hsinchu, TW;
Chia Ying Lin, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device includes forming a plurality of isolation structures in a semiconductor substrate and forming a plurality of blocking structures over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures. The method further includes forming a photoresist layer on the semiconductor substrate, exposing the photoresist layer to a light source through a mask, and developing the photoresist layer to create a patterned photoresist feature that covers a first region of a portion of the semiconductor substrate between two of the isolation structures. The portion of the semiconductor substrate having a second region that is exposed.