The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Jan. 15, 2016
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Sarad Bahadur Thapa, Burghausen, DE;
Maik Haeberlen, Burghausen, DE;
Marvin Zoellner, Frankfurt A.D. Oder, DE;
Thomas Schroeder, Berlin, DE;
Assignee:
SILTRONIC AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0243 (2013.01); H01L 21/0265 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02516 (2013.01); H01L 21/02603 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 21/02645 (2013.01); H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/267 (2013.01);
Abstract
Problems associated with the mismatch between a silicon substrate and a group-IIIA nitride layer are addressed by employing a silicon substrate processed to have a surface comprising closely spaced tips extending from the surface, depositing a group-IIIB silicide layer on the tips, then depositing a group-IIIB nitride layer, and then depositing a group-IIIA nitride.