The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Oct. 20, 2017
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Danny PakChum Shum, Singapore, SG;
Francis YongWee Poh, Singapore, SG;
Jingsheng Chen, Singapore, SG;
Shaohai Chen, Singapore, SG;
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Magnetic tunnel junction (MTJ) structures, spin transfer torque magnetic random access memory (STT MRAM) structures, and methods for fabricating integrated circuits including such structures are provided. In an embodiment, an MTJ structure includes a cobalt iron carbon (CoFeC) fixed reference layer. Further, the MTJ structure includes a cobalt iron carbon (CoFeC) free storage layer. Also, the MTJ structure includes a tunnel barrier layer between the fixed reference layer and the free storage layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile