The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Mar. 30, 2016
Applicant:

Hokuriku Seikei Industrial Co., Ltd., Ishikawa, JP;

Inventors:

Masahiro Okesaku, Ishikawa, JP;

Michito Miyahara, Ishikawa, JP;

Hideo Eto, Mie, JP;

Yukio Okudo, Mie, JP;

Makoto Saito, Ishikawa, JP;

Hiroshi Sanda, Ishikawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/575 (2006.01); H01L 21/3065 (2006.01); C04B 35/565 (2006.01); C04B 35/626 (2006.01); C04B 35/63 (2006.01); C04B 35/645 (2006.01);
U.S. Cl.
CPC ...
C04B 35/5755 (2013.01); C04B 35/565 (2013.01); C04B 35/575 (2013.01); C04B 35/62695 (2013.01); C04B 35/6303 (2013.01); C04B 35/645 (2013.01); H01L 21/3065 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/383 (2013.01); C04B 2235/3821 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/604 (2013.01); C04B 2235/658 (2013.01); C04B 2235/666 (2013.01); C04B 2235/667 (2013.01); C04B 2235/725 (2013.01); C04B 2235/77 (2013.01); C04B 2235/85 (2013.01);
Abstract

A silicon carbide member for a plasma processing apparatus is obtained by mixing an α-silicon carbide powder having an average particle size of 0.3 to 3 μm, with an amount of metal impurities in the α-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising BC in amount of 0.5 to 5 weight parts or AlOand YOin total amount of 3 to 15 weight parts; sintering a mixture of the α-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.


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