The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

May. 08, 2017
Applicant:

Rambus Inc., Sunnyvale, CA (US);

Inventors:

Craig M. Smith, Spencerport, NY (US);

Michael Guidash, Rochester, NY (US);

Jay Endsley, San Jose, CA (US);

Thomas Vogelsang, Mountain View, CA (US);

James E. Harris, Tyler, TX (US);

Assignee:

Rambus Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H04N 5/355 (2011.01); H04N 5/378 (2011.01); H04N 5/347 (2011.01); H04N 5/3745 (2011.01); H01L 27/146 (2006.01); H04N 5/374 (2011.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
H04N 5/3559 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H04N 5/347 (2013.01); H04N 5/355 (2013.01); H04N 5/378 (2013.01); H04N 5/3741 (2013.01); H04N 5/37455 (2013.01); H01L 27/14643 (2013.01);
Abstract

In a pixel array within an integrated-circuit image sensor, each of a plurality of pixels is evaluated to determine whether charge integrated within the pixel in response to incident light exceeds a first threshold. N-bit digital samples corresponding to the charge integrated within at least a subset of the plurality of pixels are generated, and then applied to a lookup table to retrieve respective M-bit digital values (M being less than N), wherein a stepwise range of charge integration levels represented by possible states of the M-bit digital values extends upward from a starting charge integration level that is determined based on the first threshold.


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