The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Dec. 02, 2016
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Pin-Dai Sue, Hsinchu, TW;
Ting-Wei Chiang, New Taipei, TW;
Hui-Zhong Zhuang, Kaohsiung, TW;
Li-Chun Tien, Tainan, TW;
Shun-Li Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A semiconductor device, comprising at least one active region; at least one MD region formed over a portion of the at least one active region; and at least one gate electrode formed over a portion of the at least one active region different than the portion of the active region where the MD region is formed. The semiconductor device further comprises at least one metal layer over at least a portion of the at least one active region, the at least one metal layer being located on a layer of the semiconductor device, different than the layers on which the at least one MD region and at least one gate electrode are formed. A via is formed over the at least one active region and configured to connect one of the at least one gate electrodes to one of the at least one metal layers. The at least one metal layer is configured to enable the at least one gate electrode to be connected to another at least one electrode and/or at least one MD region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile