The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Apr. 27, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chun-Sheng Liang, Changhua County, TW;
Meng-Fang Hsu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming high-k metal gates (HKMGs) includes removing a dummy gate structure formed over a first fin and a second fin to form a trench that exposes portions of the first fin and the second fin, forming a high-k dielectric layer over the exposed portions of the first fin and the second fin, forming a capping layer over the high-k dielectric layer, forming a hard mask layer over the capping layer, such that the hard mask layer fills the trench completely, forming an isolation feature in the hard mask layer between the first fin and the second fin, the isolation feature having sidewalls that extend through the capping layer, removing the hard mask layer to expose the capping layer and the sidewalls of the isolation feature, and forming a conductive electrode over the capping layer and along the sidewalls of the isolation feature.