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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10276675 B1

PDFFull Text
Date of Patent:
Apr. 30, 2019

Filed:

Apr. 10, 2018

Integrated circuit device and method of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Jung-Hun Choi, Seoul, KR;

Da-Il Eom, Goyang-si, KR;

Sun-Jung Lee, Hwaseong-si, KR;

Sung-Uk Jang, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:

Volentine, Whitt & Francos, PLLC

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 27/092 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 21/8238 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/76805 (2013.01); H01L 21/76846 (2013.01); H01L 21/823418 (2013.01); H01L 21/823425 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 23/485 (2013.01); H01L 27/0924 (2013.01); H01L 29/1604 (2013.01); H01L 29/165 (2013.01); H01L 29/41783 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 2029/7858 (2013.01);
Abstract

An integrated circuit device includes a source/drain region having a recess in its top, a contact plug extending on the source/drain region from within the recess, and a metal silicide layer lining the recess and having a first portion covering a bottom of the contact plug and a second portion that is integral with the first portion and covers a lower part of sides of the contact plug. The second portion of the silicide layer may have a thickness different from a thickness of the first portion of the silicide layer. The silicide layer is formed at a relatively low temperature to offer an improved resistance characteristic as between the source/drain region and the contact plug.

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