The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jan. 19, 2017
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/3115 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 21/283 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/0335 (2013.01); H01L 21/283 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/31155 (2013.01); H01L 21/32051 (2013.01); H01L 21/76804 (2013.01); H01L 29/2003 (2013.01); H01L 29/42376 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor device includes a base layer, a dielectric layer over the base layer, an opening extending through the dielectric layer and to a main surface of the base layer, the opening having a sloped sidewall, and an electrically conductive material over the sloped sidewall. An angle between the sloped sidewall and the main surface of the base layer is in a range between 5 degrees and 50 degrees. Corresponding methods of manufacturing the semiconductor device are also provided.