The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jun. 11, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Cheng-Hua Yang, Hsinchu, TW;
Ke-Feng Lin, Taipei, TW;
Ming-Tsung Lee, Yilan County, TW;
Shih-Teng Huang, Taichung, TW;
Chih-Chung Wang, Hsinchu, TW;
Chiu-Te Lee, Hsinchu County, TW;
Shu-Wen Lin, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A schottky diode includes a schottky junction, an ohmic junction, a first isolation structure and a plurality of doped regions. The schottky junction includes a first well in a substrate and a first electrode contacting the first well. The ohmic junction includes a junction region in the first well and a second electrode contacting the junction region. The first isolation structure is disposed in the substrate and separates the schottky junction from the ohmic junction. The doped regions are located in the first well and under the schottky junction, wherein the doped regions separating from each other constitute a top-view profile of concentric circles.