The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Oct. 23, 2017
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;

Inventors:

Zhonghao Huang, Beijing, CN;

Yongliang Zhao, Beijing, CN;

Houfeng Zhou, Beijing, CN;

Zhiyong Ning, Beijing, CN;

Hongru Zhou, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 27/127 (2013.01); H01L 21/02068 (2013.01); H01L 21/0274 (2013.01); H01L 21/3065 (2013.01); H01L 21/32134 (2013.01); H01L 27/1288 (2013.01);
Abstract

A patterning method employing a half tone mask includes the steps of: successively forming a first thin film layer, a second thin film layer and a photoresist thin film layer on a substrate; exposing and developing the photoresist thin film layer by using a half tone mask plate; performing a first etching on the substrate that is exposed and developed; performing a second etching on the substrate that has been subject to the first etching; passivating the substrate that has been subject to the first etching; ashing the substrate that has been passivated; performing a third etching on the substrate that has been subject to the ashing and the second etching; and, stripping the substrate that has been subject to the third etching.


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