The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Apr. 27, 2017
Hyung Joon Kim, Yongin-si, KR;
Yong Seok Cho, Seoul, KR;
Bio Kim, Seoul, KR;
Jung Ho Kim, Seongnam-si, KR;
Joong Yun Ra, Hwaseong-si, KR;
Sung Hae Lee, Suwon-si, KR;
Hyung Joon Kim, Yongin-si, KR;
Yong Seok Cho, Seoul, KR;
BiO Kim, Seoul, KR;
Jung Ho Kim, Seongnam-si, KR;
Joong Yun Ra, Hwaseong-si, KR;
Sung Hae Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device includes forming a mold structure including alternately stacked mold insulating and sacrificial layers on a substrate, forming a vertical structure through the mold structure, forming side openings by removing the sacrificial, forming a preliminary dielectric layer in the side openings, forming a dielectric layer by heat-treating the preliminary dielectric layer, removing a surface layer of the dielectric layer, forming a first conductive layer covering the dielectric layer in the side openings, and forming a second conductive layer covering the first conductive layer and filling the side openings.