The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Nov. 10, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Aryan Afzalian, Chastre, BE;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method and structure for suppressing band-to-band tunneling current in a semiconductor device having a high-mobility channel material includes forming a channel region adjacent to and in contact with one of a source region and a drain region. A tunnel barrier layer may be formed such that the tunnel barrier layer is interposed between, and in contact with, the channel region and one of the source region and the drain region. In some embodiments, a gate stack is then formed over at least the channel region. In various examples, the tunnel barrier layer includes a first material, and the channel region includes a second material different than the first material. In some embodiments, the semiconductor device may be oriented in one of a horizontal or vertical direction, and the semiconductor device may include one of a single-gate or multi-gate device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile