The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jun. 22, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Pin Huang, New Taipei, TW;
Hou-Yu Chen, Hsinchu County, TW;
Chuan-Li Chen, Yunlin County, TW;
Chih-Kuan Yu, Nantou County, TW;
Yao-Ling Huang, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate; a first device disposed on the substrate, and the first device includes at least two first gate stacks, in which the two adjacent first gate stacks have a first distance therebetween; a plurality of first gate spacers having a first thickness disposed on opposite sidewalls of the first gate stacks; the semiconductor device further includes a second device disposed on the substrate, and the second device includes at least two second gate stacks, in which the two adjacent second gate stacks have a second distance therebetween, and the first distance is smaller than the second distance; a plurality of second gate spacers having a second thickness disposed on opposite sidewalls of the second gate stacks, and the first thickness is greater than the second thickness.