The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jul. 18, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chin-Yu Ku, Hsinchu, TW;
Cheng-Lung Yang, Kaohsiung, TW;
Chen-Shien Chen, Hsinchu County, TW;
Hon-Lin Huang, Hsinchu, TW;
Chao-Yi Wang, Tainan, TW;
Ching-Hui Chen, Hsinchu, TW;
Chien-Hung Kuo, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device and a manufacturing method for the semiconductor device are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump a spacer and surrounds the bump and disposed between the etching stop layer and the bump.