The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
May. 17, 2018
United Microelectronics Corp., Hsinchu, TW;
Xiang Li, Singapore, SG;
Ding-Lung Chen, Singapore, SG;
En-Feng Liu, Singapore, SG;
Yu-Cheng Tung, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor device and a method of forming the semiconductor device are provided. The semiconductor device includes a substrate, an interconnection structure, an oxide semiconductor (OS) transistor and a contact structure. The substrate has a first surface and a second surface opposite to the first surface. The interconnection structure is disposed on the first surface, and the oxide semiconductor (OS) transistor is disposed on the second surface. Also, the OS transistor includes a back gate disposed on the second surface of the substrate. The contact structure is formed between the OS transistor and the interconnection structure, and the contact structure is electrically connected to the back gate. The contact structure penetrates through the substrate for electrically connecting the interconnection structure to the OS transistor.