The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Aug. 01, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ian D. W. Melville, Highland, NY (US);

Mukta G. Farooq, Hopewell Junction, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/28 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); G01R 31/2884 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2224/06515 (2013.01);
Abstract

A structure and method for forming a split probe pad structure for a semiconductor structure. The split probe pad structure may include a first probe pad structure over a substrate, the first probe pad structure including a first probe pad in electrical communication with the substrate; a second probe pad structure over the substrate, the second probe pad structure including a second probe pad in electrical communication with the substrate, wherein the second probe pad structure is laterally separated from the first probe pad structure; and a non-metal region between the first probe pad structure and the second probe pad structure. The split probe pad structure may be formed in a kerf region of the semiconductor structure. The non-metal region may include a dielectric material.


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