The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Feb. 28, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Shin-Chi Chen, Penghu County, TW;
Chih-Chung Chen, Tainan, TW;
An-Chi Liu, Tainan, TW;
Chih-Yueh Li, Taipei, TW;
Pei-Ching Yeh, Changhua County, TW;
Tsung-Chieh Yang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of removing a fin structure includes providing a substrate. A fin structure extends from the substrate. A mask layer is disposed on a top surface of the fin structure. An organic dielectric layer covers the substrate, the fin structure and the mask layer. A first etching process is performed to entirely remove the mask layer by taking the organic dielectric layer as a mask. Then a second etching process is performed to remove the fin structure. The first etching process is preferably an anisotropic etching process, and the second etching process is an isotropic etching process.