The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Oct. 30, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ying-Hao Wu, Taoyuan, TW;
Chao-Kuei Yeh, Changhua, TW;
Tai-Yen Peng, Hsinchu, TW;
Yun-Yu Chen, New Taipei, TW;
Jiann-Horng Lin, Hsinchu, TW;
Chih-Hao Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.