The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Sep. 20, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jiehui Shu, Clifton Park, NY (US);

Garo J. Derderian, Saratoga Springs, NY (US);

Jinping Liu, Ballston Lake, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/12 (2006.01); H01L 21/033 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0688 (2013.01); H01L 27/0886 (2013.01); H01L 27/0922 (2013.01); H01L 27/1211 (2013.01); H01L 29/6681 (2013.01);
Abstract

The disclosure is directed to methods for forming a set of fins from a substrate. One embodiment of the disclosure includes: providing a stack over the substrate, the stack including a first oxide over the substrate, a first nitride over the pad oxide, a second oxide over the first nitride, and a first hardmask over the second oxide; patterning the first hard mask to form a first set of hardmask fins over the second oxide; oxidizing the first set of hardmask fins to convert the first set of hardmask fins into a set of oxide fins; using the set of oxide fins as a mask, etching the second oxide and the first nitride to expose portions of the first oxide thereunder such that remaining portions of the second oxide and the first nitride remain disposed beneath the set of oxide fins thereby defining a set of mask stacks; and using the set of mask stacks as a mask, etching the exposed portions of the first oxide and the substrate thereby forming the set of fins from the substrate.


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