The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jun. 11, 2018
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Sebastian Schafer, Fremont, CA (US);
Dmytro Apalkov, San Jose, CA (US);
Alexey Vasilyevitch Khvalkovskiy, Sunnyvale, CA (US);
Vladimir Nikitin, Campbell, CA (US);
Robert Beach, Los Gatos, CA (US);
Zheng Duan, Sunnyvale, CA (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.