The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Nov. 30, 2017
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Damon G. Holmes, Scottsdale, AZ (US);

Jeffrey Kevin Jones, Chandler, AZ (US);

Ning Zhu, Chandler, AZ (US);

Jeffrey Spencer Roberts, Tempe, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/187 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/213 (2006.01); H01L 23/66 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H03F 1/565 (2013.01); H01L 23/49838 (2013.01); H01L 23/66 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H01L 2223/6655 (2013.01); H03F 2200/222 (2013.01); H03F 2200/225 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract

A system may include a radio frequency (RF) amplifier device that includes an input impedance matching network and first and second baseband decoupling circuits, which may remove intermodulation distortion products from signal energy input to the RF amplifier device at baseband frequencies. The input impedance matching network may act as a band-pass or low-pass filter. A gate bias voltage may be applied to the gate of a transistor in the RF amplifier device through one of the baseband decoupling circuits or, alternatively, at an input node of the RF amplifier device.


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