The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Dec. 20, 2017
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Shiang-Yu Chen, Hsinchu, TW;
Kuo-Ming Wu, Hsinchu, TW;
Yi-Chun Lin, Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Present application provides a method of manufacturing a semiconductor structure, including forming a well, forming a gate electrode over the well, implanting a lightly doped region in a first side of the well, implanting a first drain in the lightly doped region by a first depth, implanting a second drain in the lightly doped region by a second depth, implanting a source in a second side of the well, the second side being opposite to the first side. The second depth is greater than the first depth. The gate electrode is formed to cover a part of the lightly doped region and a part of the first drain.