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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10269896 B1

PDFFull Text
Date of Patent:
Apr. 23, 2019

Filed:

May. 05, 2017

Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Hans Weber, Bayerisch Gmain, DE;

Wolfgang Jantscher, Villach, AT;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

INFINEON TECHNOLOGIES AUSTRIA AG, Villach, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Walter H Swanson

Assistant Examiner:

Kien C Ly

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01); H01L 21/30 (2006.01); H01L 29/78 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01L 29/36 (2006.01); H01L 29/32 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/263 (2013.01); H01L 21/265 (2013.01); H01L 21/268 (2013.01); H01L 21/2636 (2013.01); H01L 21/2686 (2013.01); H01L 21/26513 (2013.01); H01L 21/3003 (2013.01); H01L 21/324 (2013.01); H01L 21/67103 (2013.01); H01L 22/20 (2013.01); H01L 22/34 (2013.01); H01L 29/167 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 22/14 (2013.01);
Abstract

A method of manufacturing semiconductor devices in a semiconductor wafer comprises forming charge compensation device structures in the semiconductor wafer. An electric characteristic related to the charge compensation device structures is measured. At least one of proton irradiation and annealing parameters are adjusted based on the measured electric characteristic. The semiconductor wafer is irradiated with protons and annealed based on the at least one of the adjusted proton irradiation and annealing parameters. Laser beam irradiation parameters are adjusted with respect to different positions on the semiconductor wafer based on the measured electric characteristic. The semiconductor wafer is irradiated with a photon beam at the different positions on the wafer based on the photon beam irradiation parameters.

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