The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Jun. 26, 2015
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Ningbo Semiconductor International Corporation, Ningbo, CN;

Inventors:

Jerry Liu, Shanghai, CN;

Phil Wu, Shanghai, CN;

Herb He Huang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 27/1463 (2013.01); H01L 27/1469 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01); H01L 2224/48091 (2013.01);
Abstract

A device includes a first integrated circuit containing a photodiode and a first metal interconnect structure connected to the photodiode, and a second integrated circuit containing a transistor and a second metal interconnect structure connected to the transistor. The first integrated circuit and the second integrated circuit are connected together through the first metal interconnect structure and the second metal interconnect structure. Since no transistor is present around the photodiode, the photodiode has an increased photosensitive area and an improved fill factor, resulting in an increase of the quantum efficiency, higher integration and lower consumption of the image sensor.


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