The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Aug. 01, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chih-Hao Yu, Tainan, TW;

Shao-Ming Yu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 27/108 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/10879 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/42356 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7849 (2013.01); H01L 29/7853 (2013.01);
Abstract

A semiconductor device includes a first fin structure extending from a semiconductor substrate. A second fin structure is disposed over the first fin structure. The second fin structure includes a first layer including a first semiconductor material. The second fin structure further includes a second layer including a second semiconductor material disposed over the first layer. The second layer has a vertical sidewall. The second semiconductor material is different from the first semiconductor material. A gate structure is disposed over the semiconductor substrate and wraps around the first and second layers of the second fin structure.


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