The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jun. 29, 2012
Chi-feng Huang, Zhubei, TW;
Chia-chung Chen, Keelung, TW;
Victor Chiang Liang, Hsin-Chu, TW;
Mingo Liu, Hsin-Chu, TW;
Chi-Feng Huang, Zhubei, TW;
Chia-Chung Chen, Keelung, TW;
Victor Chiang Liang, Hsin-Chu, TW;
Mingo Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a deep well region of a first conductivity type in a substrate, implanting a portion of the deep well region to form a first gate, and implanting the deep well region to form a well region. The well region and the first gate are of a second conductivity type opposite the first conductivity type. An implantation is performed to form a channel region of the first conductivity type over the first gate. A portion of the deep well region overlying the channel region is implanted to form a second gate of the second conductivity type. A source/drain implantation is performed to form a source region and a drain region of the first conductivity type on opposite sides of the second gate. The source and drain regions are connected to the channel region, and overlap the channel region and the first gate.