The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Nov. 13, 2017
Applied Materials, Inc., Santa Clara, CA (US);
Bhushan N. Zope, Santa Clara, CA (US);
Avgerinos V. Gelatos, Redwood City, CA (US);
Bo Zheng, Saratoga, CA (US);
Yu Lei, Belmont, CA (US);
Xinyu Fu, Pleasanton, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Sang-Ho Yu, Cupertino, CA (US);
Mathew Abraham, Mountain View, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.