The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Nov. 01, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Xi-Zong Chen, Tainan, TW;

Y. H. Kuo, Hsinchu, TW;

Cha-Hsin Chao, Taipei, TW;

Yi-Wei Chiu, Kaohsiung, TW;

Li-Te Hsu, Shanhua Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/28 (2006.01); H01L 23/538 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0273 (2013.01); H01L 21/0337 (2013.01); H01L 21/28 (2013.01); H01L 21/7688 (2013.01); H01L 21/76802 (2013.01); H01L 21/76804 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/5386 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01);
Abstract

An embodiment method includes patterning an opening through a dielectric layer, depositing an adhesion layer along sidewalls and a bottom surface of the opening, depositing a first mask layer in the opening over the adhesion layer, etching back the first mask layer below a top surface of the dielectric layer, and widening an upper portion of the opening after etching back the first mask layer. The first mask layer masks a bottom portion of the opening while widening the upper portion of the opening. The method further includes removing the first mask layer after widening the upper portion of the opening and after removing the first mask layer, forming a contact in the opening by depositing a conductive material in the opening over the adhesion layer.


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