The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jun. 09, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yuhsiang Chen, Zhubei, TW;
Shao-Yu Chou, Zhubei, TW;
Chun-Hao Chang, Taichung, TW;
Min-Shin Wu, Taipei, TW;
Yu-Der Chih, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Memories with symmetric read current profiles are provided. A memory includes a first memory array formed by a plurality of memory cells, a second memory array formed by a plurality of memory cells, and a read circuit. The read circuit includes a first decoder coupled to the first memory array, a second decoder coupled to the second memory array, and an output buffer. The first decoder obtains first data from the first memory array according a first address signal. The second decoder obtains second data from the second memory array according the first address signal. The output buffer selectively provides the first data or the second data as an output according to a control signal. The first data is complementary to the second data.