The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Oct. 14, 2016
Applicants:

Boyoung Seo, Suwon-si, KR;

Seongui Seo, Suwon-si, KR;

Gwanhyeob Koh, Seoul, KR;

Yongkyu Lee, Gwacheon-si, KR;

Inventors:

Boyoung Seo, Suwon-si, KR;

Seongui Seo, Suwon-si, KR;

Gwanhyeob Koh, Seoul, KR;

Yongkyu Lee, Gwacheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/165 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01);
Abstract

A magnetic memory device includes a substrate, a landing pad on the substrate, first and second magnetic tunnel junction patterns disposed on the interlayer insulating layer and spaced apart from the landing pad when viewed from a plan view, and an interconnection structure electrically connecting a top surface of the second magnetic tunnel junction pattern to the landing pad. A distance between the landing pad and the first magnetic tunnel junction pattern is greater than a distance between the first and second magnetic tunnel junction patterns, and a distance between the landing pad and the second magnetic tunnel junction pattern is greater than the distance between the first and second magnetic tunnel junction patterns, when viewed from a plan view.


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